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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B 2N3904 EPITAXIAL PLANAR NPN TRANSISTOR C Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906. L M 1 2 3 F H A FEATURES N K D G E F C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 40 6 200 50 625 1.5 150 -55 150 UNIT V V V mA mA mW W TO-92 2002. 9. 12 Revision No : 1 1/4 2N3904 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage SYMBOL ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) DC Current Gain * hFE(3) hFE(4) hFE(5) Collector-Emitter Saturation Voltage * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie hre hfe hoe NF VCE=5V, IC=0.1mA Rg=1k f=10Hz 15.7kHz Vout V in 275 TEST CONDITION VCE=30V, VEB=3V VCE=30V, VEB=3V IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0, f=1MHz VBE=0.5V, IC=0, f=1MHz MIN. 60 40 6.0 40 70 100 60 30 0.65 300 1.0 TYP. - MAX. 50 50 300 0.2 UNIT nA nA V V V V 0.3 0.85 V 0.95 4.0 8.0 10 8.0 400 40 5.0 dB MHz pF pF k x10-4 Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Collector Output Admittance Noise Figure * VCE=10V, IC=1mA, f=1kHz 0.5 100 1.0 , - Delay Time td 10k C Total< 4pF - - 35 300ns Rise Time Switching Time tr 10.9V -0.5V VCC =3.0V 0 t r ,t f < 1ns, Du=2% Vout - - 35 nS V in 275 Storage Time tstg 10k 1N916 or equiv. C Total< 4pF - - 200 Fall Time tf 20s 10.9V -9.1V VCC =3.0V 0 t r ,t f < 1ns, Du=2% - - 50 * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2002. 9. 12 Revision No : 1 2/4 2N3904 I C - V CE COLLECTOR CURRENT I C (mA) 100 80 60 40 20 0 I B =0.1mA COMMON EMITTER Ta=25 C 1 0.9 0.8 0.7 0.6 0.5 h FE - I C 1k DC CURRENT GAIN h FE 500 300 Ta=125 C Ta=25 C COMMON EMITTER VCE =1V 0.4 0.3 0.2 100 50 30 Ta=-55 C 0 1 2 3 4 10 0.1 0.3 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) V BE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 5 3 Ta=-55 C COMMON EMITTER I C /I E =10 VCE(sat) - I C 1 0.5 0.3 COMMON EMITTER I C /I B =10 1 0.5 0.3 0.1 0.05 0.03 Ta=125 C Ta=25 C Ta=-55 C Ta=25 C Ta=125 C 0.1 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 0.01 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) I C - VBE COLLECTOR CURRENT I C (mA) 200 160 120 Ta= 125 C Ta= 25 C Ta=5 5C VCE - I B 1.0 0.8 0.6 0.4 0.2 IC =1mA IC =10mA I C =30mA I C =100mA COMMON EMITTER VCE =1V 80 40 0 0 0.4 0.8 1.2 1.6 0 0.001 COMMON EMITTER Ta=25 C 0.01 0.1 1 10 BASE-EMITTER VOLTAGE VBE (V) BASE CURRENT I B (mA) 2002. 9. 12 Revision No : 1 3/4 2N3904 COLLECTOR POWER DISSIPATION PC (mW) Cob - VCB , C ib - VEB 50 30 CAPACITANCE Cob (pF) C ib (pF) f=1MHz Ta=25 C Pc - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 10 5 3 C ib C ob 1 0.5 0.1 0.3 1 3 10 30 REVERSE VOLTAGE V CB (V) V EB (V) AMBIENT TEMPERATURE Ta ( C) 2002. 9. 12 Revision No : 1 4/4 |
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